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Molecular Dynamics Simulations of Nanoindentation of Silicon Nitride

  • Phillip Walsh (a1), Andrey Omeltchenko (a1), Hideaki Kikuchi (a1), Rajiv K. Kalia (a1), Aiichiro Nakano (a1) and Priya Vashishta (a1)...


This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.



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