In fine-grained metallic materials, the dominant grain boundary (GB) process, such as dislocation emission, dislocation absorption, and dislocation pile-up, causes non-uniform deformation, which results in high yield stress and low ductility. When a nano-scale void is introduced, the dislocation activity enhancement around the void could inhibit GB fracture and enhance ductility. In this study, by considering nanocrystalline Cu models, the influence of an intragranular nano-scale void on the fracture process has been investigated through molecular dynamics simulation. The dependence of ductility enhancement on the grain size and void size has especially been discussed at low and room temperatures. Sufficient dislocation activity enhancement accompanied by optimal void growth causes a fracture mode transition from GB fracture to transgranular fracture. While the ductility enhancement strongly depends on the void size at low temperature, it depends on the grain size at room temperature. The strong dependence of ductility enhancement on the temperature is found in the case of relatively small grains.