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Molecular beam epitaxy of GaN on lattice-matched ZrB2 substrates using low-temperature GaN and AlN nucleation layers

Published online by Cambridge University Press:  01 February 2011

Rob Armitage ,
Kazuhiro Nishizono ,
Jun Suda  and
Tsunenobu Kimoto
Rob Armitage
Affiliation:
Kyoto University, Nishikyo-ku, Kyoto, Japan615–8510
Kazuhiro Nishizono
Affiliation:
Kyocera Corporation, Sourakugunseikachou, Hikaridai, Kyoto, Japan 619–0237
Jun Suda
Affiliation:
Kyoto University, Nishikyo-ku, Kyoto, Japan615–8510
Tsunenobu Kimoto
Affiliation:
Kyoto University, Nishikyo-ku, Kyoto, Japan615–8510
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Abstract

GaN epilayers have been grown by plasma-assisted molecular-beam epitaxy on ZrB2 substrates with close in-plane lattice match. Growth processes utilizing both low-temperature GaN (LT-GaN) and AlN nucleation layers were investigated. The x-ray ω-scan widths for the optimized LT-GaN nucleation process were 400 and 750 arcsec for symmetric and asymmetric reflections, respectively. When using LT-GaN nucleation layers, the chemical incompatibility of ZrB2 results in a high dislocation density despite the in-plane lattice match. The epilayer polarity was N-polar for LT-GaN nucleation layers under all conditions investigated. For AlN nucleation layers, Ga-polar epilayers were obtained under suitable conditions (Al-rich, lower nucleation temperatures) for nominal AlN thickness as low as 1 nm. From RHEED analysis it appears that a psuedomorphic Al wetting layer forms on the ZrB2 surface, and that using AlN as the nucleation layer may offer promise for reducing the epilayer defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.36
Copyright
Copyright © Materials Research Society 2005

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References

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