Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T02:04:02.528Z Has data issue: false hasContentIssue false
  • English
  • Français

Molecular beam epitaxy growth of Sr1-xKxFe2As2 and Ba1-xKxFe2As2

Published online by Cambridge University Press:  30 July 2012

Michio Naito ,
Shinya Ueda ,
Soichiro Takeda ,
Shiro Takano  and
Akihiro Mitsuda
Michio Naito
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Shinya Ueda
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Soichiro Takeda
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Shiro Takano
Affiliation:
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan TRIP, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan
Akihiro Mitsuda
Affiliation:
Department of Physics, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan
Get access

Abstract

Single-crystalline films of superconducting Sr1-xKxFe2As and Ba1-xKxFe2As2 were grown by molecular beam epitaxy (MBE). The most crucial problem in MBE growth of these compounds is the high volatility of elemental K. The key to incorporating K into films is low-temperature growth (≤ 350 ºC) in reduced As flux. We performed a systematic study of the doping dependence of Tc in Ba1-xKxFe2As2 for x = 0.0 to 1.0. The highest Tcon (Tcend) so far attained for Ba1-xKxFe2As2 is 38.3 K (35.5 K) at x ~ 0.3.

Keywords

superconductingmolecular beam epitaxy (MBE)Fe
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1434: Symposium I – Recent Advances in Superconductors, Novel Compounds and High-Tc Materials , 2013 , mrss12-1434-i09-04
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kamihara, Y., Watanabe, T., Hirano, M., and Hosono, H., J. Am. Chem. Soc. 130 (2008) 3296.Google Scholar
2. Johrendt, D. and Pottgen, R., Physica C 469 (2009) 332.Google Scholar
3. Lv, B., Gooch, M., Lorenz, B., Chen, F., Guloy, A. M., and Chu, C. W., New J. Phys. 11 (2009) 025013.Google Scholar
4. Lee, N. H., Jung, S. -G., Kim, D. H., and Kang, W. N.: Appl. Phys. Lett. 96 (2010) 202505.Google Scholar
5. Takeda, S., Ueda, S., Yamagishi, T., Agatsuma, S., Takano, S., Mitsuda, A., and Naito, M., Appl. Phys. Express 3 (2010) 093101.Google Scholar
6. Yamagishi, T., Ueda, S., Takeda, S., Takano, S., Mitsuda, A., and Naito, M., Physica C 471 (2011) 1177.Google Scholar
7. The trend lines are as follows: c 0 = 0.8132x + 13.062 for Ba1- x K x Fe2As2 after ref. [2] and c 0 = 1.4656x + 12.364 for Sr1- x K x Fe2As2 after ref. [3].Google Scholar
8. Chen, H., Ren, Y., Qiu, Y., Bao, W., Liu, R. H., Wu, G., Wu, T., Xie, Y. L., Wang, X. F., Huang, Q., and Chen, X. H., Europhys. Lett. 85 (2009) 17006.Google Scholar