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Modification of The Near-Surface Region Of Al2O3 By Ion Implantation *

  • C. W. White (a1), G. C. Farlow (a1), H. Naramoto (a2), C. J. Mchargue (a3) and B. R. Appleton (a1)...

Abstract

Physical and structural property changes resulting from ion implantation and thermal annealing of α-A12O3 are reviewed. Emphasis is placed on damage production during implantation, damage recovery during thermal annealing, and impurity incorporation during thermal annealing. Physical and structural property changes caused by ion implantation and annealing are correlated with changes in the mechanical properties.

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Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

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1. See for example, Ion Implantation in Semiconductors, ed. by Chernov, F., Borders, J. A. and Brice, D. K., Plenum Press, New York, 1976.
2. Treatise on Materials Science and Technology, Vol. 18, Ion Implantation, ed. by Hirvonen, J. K., Academic Press, New York, 1980.
2a Also see numerous articles in the Proc. of the 2nd and 3rd Inter. Conf. on Ion Beam Modification of Materials; Proceedings published in Nucl. Instrum. Methods 182/183 (1981) and 209/210 (1983).
3. Arnold, G. W., Krefft, G. B. and Norris, C. B., Appl. Phys. Lett. 25, 540 (1974).
4. Krefft, G. B., Beezhold, W. and EerNisse, E. P., IEEE Trans. on Nucl. Sci. NS-22, 2247 (1975).
5. Luera, T. F., Borders, J. A. and Arnold, G. W., in Ion Implantation in Semiconductors, ed. by Chernov, F., Borders, J. A. and Brice, D. K., Plenum Press, New York, 1976, p. 285.
6. Evans, B. D., Hendricks, H. D., Bazzarre, F. D. and Bunch, J. M., Ref. 5, p. 265.
7. McHargue, C. J., Lewis, M. B., Appleton, B. R., Naramoto, H., White, C. W. and Williams, J. M., Proc. Inter. Conf. of the Science of Hard Materials Moren, Wyoming August 24–28, 1981.
8. McHargue, C. J., Naramoto, H., Appleton, B. R., White, C. W. and Williams, J. M., p. 147 in Metastable Materials Formation by Ion Implantation, ed. by Picraux, S. T. and Choyke, W. J., North Holland, New York, 1982.
9. Naramoto, H., White, C. W., Williams, J. M., McHargue, C. J., Holland, O. W., Abraham, M. M., and Appleton, B. R., J. Appl. Phys. 54, 683 (1983).
10. Naramoto, H., McHargue, C. J., White, C. W., Williams, J. M., Holland, O. W., Abraham, M. M., and Appleton, B. R., Nucl. Instrum. Methods 209/210, 1159 (1983).
11. McHargue, C. J., White, C. W., Appleton, B. R., Naramoto, H., Farlow, G. C., and Williams, J. M., in Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., North Holland, New York, in press.
12. Farlow, G. C., White, C. W., McHargue, C. J., and Appleton, B. R., in Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Holland, O. W., Clayton, C. R., and White, C. W., North Holland, New York, in press.
13. McHargùe, C. J., Lewis, M. B., Appleton, B. R., Naramoto, H., White, C. W., and Williams, J. M., p. 451 in The Science of Hard Materials, ed. by Viswanadham, R.K., Rowcliffe, D. J., and Gurland, J., Plenum Press, New York, 1983.
14. The Stopping and Ranges of Ions in Matter, Vol. 4, ed. by Ziegler, J. F., Pergamon Press, New York, 1977.
15. Burnett, P. J. and Page, T. F., J. Mater. Sci., to be published.
16. Carnera, A., Drigo, A. V., and Mazzoldi, P., Rad. Eff. 49, 29 (1980).
17. Phase Diagrams for Ceramists, E. Levine, M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1964, Diagram #310.
18. Phase Diagrams for Ceramists, Levine, E. M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1969, Diagram #2095.
19. Phase Diagrams for Ceramists, Levine, E. M., Robbins, C. R., McMurdie, H. F. (Am. Ceram. Soc., Columbus, Ohio) 1975, Diagram #4377.

Modification of The Near-Surface Region Of Al2O3 By Ion Implantation *

  • C. W. White (a1), G. C. Farlow (a1), H. Naramoto (a2), C. J. Mchargue (a3) and B. R. Appleton (a1)...

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