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Modification of Semiconductor-Dielectric Interface in Organic Light-emitting Field-effect Transistors

  • Yan Wang (a1), Ryotaro Kumashiro (a2), Naoya Komatsu (a3) and Katsumi Tanigaki (a4)

Abstract

In this work, ambipolar rubrene single crystal field-effect transistors (FETs) with PMMA modification layer and Au/Ca as electrodes were fabricated. The electron mobility was studied in these devices. PMMA modification layer on the surface of SiO2 is necessary for electron behavior. We found that the device with PMMA modified insulator and Au-Ca asymmetric metals possessed hole mobility and electron mobility of 1.27 and 0.017 cm−2/Vs, respectively. Furthermore, the shift of light emitting with applied gate voltage was observed in this device.

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Keywords

Modification of Semiconductor-Dielectric Interface in Organic Light-emitting Field-effect Transistors

  • Yan Wang (a1), Ryotaro Kumashiro (a2), Naoya Komatsu (a3) and Katsumi Tanigaki (a4)

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