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Modeling the Stress Evolution of Ion Beam Synthesized Nanocrystals

Published online by Cambridge University Press:  15 March 2011

D.O. Yi
Affiliation:
Applied Science and Technology Group, Univ. of Calif., Berkeley, CA 94720, U.S.A. Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
I. D. Sharp
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Calif., Berkeley, CA 94720, U.S.A. Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
Q. Xu
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Calif., Berkeley, CA 94720, U.S.A. Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
C. Y. Liao
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Calif., Berkeley, CA 94720, U.S.A. Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
J. W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
J. W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
Z. Liliental-Weber
Affiliation:
Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
D. Zakharov
Affiliation:
Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
E. E. Haller
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Calif., Berkeley, CA 94720, U.S.A. Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
D. C. Chrzan
Affiliation:
Dept. of Materials Science and Engineering, Univ. of Calif., Berkeley, CA 94720, U.S.A. Materials Sciences Division, Lawrence Berkeley Nat. Lab, Berkeley, CA 94720, U.S.A.
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Abstract

Under certain conditions, nucleation and growth can lead to substantial stresses in nanocrystals embedded in a host matrix. These stresses may be relaxed through subsequent annealing treatments. A model is presented for the relaxation of these stresses via diffusive processes within the matrix. The model reflects the effects of surface tension, potential phase transformations at or near the processing temperature, and differential thermal expansion. It is demonstrated that the model describes well the stress relaxation of ion beam synthesized Ge nanocrystals embedded in a silica matrix.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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