Skip to main content Accessibility help
×
Home

Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

  • Shaohua Liu (a1), Peter Solomon (a1), R. Carpio (a2), B. Fowler (a2), D. Simmons (a2), J. Wang (a3), R. Wise (a3), G. Imper (a4), N. B. Riley (a4), M. Moslehi (a5) and N. M. Ravindra (a6)...

Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical tc measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

Copyright

References

Hide All
[1] Gross, P., ”FT-IR Spectroscopy of Layered Structures-Thin Solid Films, Coated Substrates, Profiles, Multi-layers” SPIE Vol.1575, 169–179.
[2] Liu, S., Haigis, J., Ditaranto, M., Kinsella, K., Markham, J., Li, Q., Fenner, D.B., Solomon, P., Farquharson, S., and Morrison, P., ”Process Monitor and Control of Integrated Circuit Manufacturing Using FT-IR spectroscopy” Proceeding of AWMA/SPIE Meeting, Mc lean, VA, (Nov. 7–10, 1994)
[3] Carpio, R., Fowler, B., Simmons, D., Liu, S. and Solomon, P., ”A Comparison of Infrared Reflectance Spectroscopy and Spectroscopic Ellipsometry for Polysilicon Film Process Control”, Proceeding of Electro-Chemical Society, Miami Beach, FL, Oct. 9–14, 1994
[4] Fowler, B., Simmons, D., Carpio, R., Liu, S., and Solomon, P., ”The Measurement of Sub-Micron Epitaxial Layer Thickness and Free Carrier Concentration by Infrared Reflectance Spectroscopy” Proceeding of Electro-Chemical Society, Vol.94–33, pg. 254, Miami Beach, FL, Oct. 9-14, 1994
[5] Liu, S., et. al., patent pending.
[6] Trade Mark of Applied Materials, Inc.
[7] Wang, C. J., Wise, R., Liu, S., Haigis, J., Farquharson, S., and Fowler, B., ”In-line FT-IR for Epitaxial Silicon Film Thickness Measurement on An Applied Materials Centura Cluster Tool” Proceeding of Annual Semiconductor Manufacture Conference, Boston, MA, Nov. 14–17, 1994

Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

  • Shaohua Liu (a1), Peter Solomon (a1), R. Carpio (a2), B. Fowler (a2), D. Simmons (a2), J. Wang (a3), R. Wise (a3), G. Imper (a4), N. B. Riley (a4), M. Moslehi (a5) and N. M. Ravindra (a6)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed