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Modeling of Reverse Bias Differential Charge Experiments in Amorphous Silicon

Published online by Cambridge University Press:  16 February 2011

Finley R. Shapiro
Finley R. Shapiro*
Affiliation:
Department of Electrical and Computer Engineering, Drexel University, Philadelphia, PA 19104, USA.
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Abstract

An analytic model is developed for differential charge measurements which avoids the use of the depletion approximation. In this experiment the incremental charge in the device is calculated as the difference between the total steady-state junction charge at two nearly equal voltages, similar to a very low frequency capacitance Measurement. All of the calculations, including an iteration to find the bulk Fermi level, can easily be performed using a spreadsheet program on a personal computer. It is shown that the results of these calculations agree extremely well with simulations performed with a complete numerical device simulator. Thus, the model useful for the analysis of experimental data

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 407
Copyright
Copyright © Materials Research Society 1994

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References

1. Cohen, J.D., Lang, D.V., and Harbison, J.P., Phys. Rev. Lett. 45, 197 (1980); Phys Rev. B 25, 5285 (1982).Google Scholar
2. Okushi, H., Tokumaru, Y., Yamasaki, S., Oheda, H., and Tanaka, K., Jap. J. Appl. Phys. 30, L549 (1981).Google Scholar
3. Cullen, P., Harbison, J.P., Lang, D.V., and Adler, D., J. Non-Cryst. Sol. 59&60, 261 (1983).Google Scholar
4. Balberg, I., Gal, E., and Pratt, B., J. Non-Cryst. Sol. 59&60, 276 (1983).Google Scholar
5. Hegedus, S.S. and Fagen, E.A., IEEE Trans. Electron Dev. 39, 2368, 1992.Google Scholar
6. Cohen, J.D., Leen, T.M., and Rasmussen, R.J., Phys. Rev. Lett. 69, 3358 (1992).Google Scholar
7. Crandall, R.S., Salamon, S.J., and Xu, Y., Amorphous Silicon Technology - 1991, edited by Madan, A., Taylor, P.C., Hamakawa, Y., LeComber, P.G., and Thompson, M.J. (Materials Research Society Proceedings 219, Pittsburgh, PA 1991) pp. 557–562.Google Scholar
8. Shapiro, F.R. and Bar-Yam, Y., J. Appl. Phys., 64, 2185 1988.Google Scholar
9. Shapiro, F.R., Amorphous Silicon Technology - 1991, edited by Madun, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., and LeComber, P.G., (Materials Research Society Proceedings 219, Pittsburgh, PA 1991) pp. 457–462.Google Scholar
10. Shapiro, F.R., Amorphous Silicon Technology - 1992, edited by Thompson, M.J., Hamakawa, Y., LeComber, P.G., Madan, A. and Schiff, E., (Materials Research Society Proceedings 258, Pittsburgh, PA 1992) pp. 717–727.Google Scholar