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Modeling of Ionized Magnetron Sputtering of Copper

Published online by Cambridge University Press:  10 February 2011

M.O. Bloomfield  and
T.S. Cale
M.O. Bloomfield
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
T.S. Cale
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
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Abstract

Computer simulations are used to study ionized physical vapor deposition, with ionized magnetron sputtering of copper as the primary system of interest. The effects of sputtering-ion energy and sputtering-ion angular flux distributions on the evolution of sub-micron scale features during IPVD are explored using the EVOLVE simulator. Our goal is to develop semi- quantitative engineering relationships that accurately predict the trends in experimental responses to changes in operating conditions. A sticking- factor model is used to describe deposition by neutrals. The sticking-factor of incident Cu atoms can depend on arrival angle and energy. Copper ions can also become part of the growing film. Energy and angular dependent sputter yields for both copper and argon ions are taken alternately from MD simulation results and a semi-empirical model. Sputtered material is ejected from the surface, tracked through the gas phase, and allowed to redeposit. Redeposition is also modeled via a sticking-factor based approach. The redistribution of film material results in non-intuitive profiles and complex relationships between final profiles and process parameters such as sample bias and neutral-to-ion flux ratios.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 147
Copyright
Copyright © Materials Research Society 2000

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References

[1] EVOLVE is an extensible topography simulation framework. EVOLVE 5.Oi was released in June 1999. © 1991-1999, Timothy S. Cale.Google Scholar
[2] Cale, T. S. and Mahadev, V., Modeling of Film Deposition for Microelectronic Applications, vol. 22 of Thin Films, ch. 5, pp. 175–276. San Diego, CA: Academic Press, 1996.10.1016/S1079-4050(96)80006-8Google Scholar
[3] Cheng, P. J., Rossnagel, S. M., and Ruzic, D. N., “Directional deposition of Cu into semiconductor trench stuctures using ionized magnetron sputtering,” J. Vac. Sci. Technol. B, vol. 13, pp. 203–208, Mar/Apr 1995.10.1116/1.587998Google Scholar
[4] Lee, R. E., “Microfabrication by ion-beam etching,” J. Vac. Sci. Technol., vol. 16, pp. 164–170, Mar/Apr 1979.10.1116/1.569897Google Scholar
[5] Kress, J. D., Hanson, D. E., Voter, A. F., Liu, C. L., Liu, X. Y., and Coronell, D. G., “Molecular dynamics simulations of Cu and Ar ion sputtering of Cu (111) surfaces,” J. Vac. Sci. Technol. A, vol. 17, pp. 2819–2825, Sep 1999.10.1116/1.581948Google Scholar
[6] Nastasi, M., Mayer, J. W., and Hirvonen, J. K., Ion-Solid Interactions: Fundamentals and Applications. Cambridge Solid State Science Series, Cambridge University Press, April 1996.10.1017/CBO9780511565007Google Scholar
[7] Doughty, C., Gorbatkin, S. M., and Berry, L. A., “Spatial distribution of Cu sputter ejected by very low energy ion bombardment,” J. Appl. Phys, vol. 82, pp. 1868–1875, Aug 1997.10.1063/1.365991Google Scholar