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Modeling of High Fluence Titanium Ion Implantation and Vacuum Carburization in Steel

Published online by Cambridge University Press:  25 February 2011

D. Farkas ,
I. L. Singer  and
M. Rangaswamy
D. Farkas
Affiliation:
Department of Materials Engineering, VPI & SU, Blacksburg,VA 24061
I. L. Singer
Affiliation:
Chemistry Division, Code 6170, Naval Research Laboratory, Washington, DC 20375.
M. Rangaswamy
Affiliation:
Department of Materials Engineering, VPI & SU, Blacksburg,VA 24061
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Abstract

Concentration vs. depth profiles have been calculated for Ti and C in 52100 Ti-implanted steel. A computer formalism was developed to account for diffusion and mixing processes, as well as sputtering and lattice dilation. A Gaussian distribution of Ti was assumed to be incorporated at each time interval. The effects of sputtering and lattice dilation were then included by means of an appropriate coordinate transformation. C was assumed to be gettered from the vacuum system in a one-to-one ratio with the surface Ti concentration up to a saturation point. Both Ti and C were allowed to diffuse. A series of experimental (Auger) concentration vs. depth profiles of Ti implanted steel were analyzed using the above-mentioned assumptions. A best fit procedure for these curves yielded information on the values of the sputtering yield, range and straggling, as well as the mixing processes that occur during the implantation. The observed values are in excellent agreement with the values predicted by existing theories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 609
Copyright
Copyright © Materials Research Society 1984

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References

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