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Modeling of Cathodoluminescence and Photoluminescence Properties of Pulsed Laser-Deposited Europium-Activated Yttrium Oxide Thin Film Phosphors

Published online by Cambridge University Press:  10 February 2011

K.G. Cho ,
D. Kumar ,
Z. Chen ,
P. H. Holloway  and
R. K. Singh
K.G. Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611
D. Kumar
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611
Z. Chen
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611
P. H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL32611 Email: rsing@mse.ufl.edu
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Abstract

Europium-activated yttrium oxide (Eu:Y2O3) thin films were deposited on (100) silicon and (0001) sapphire substrates using 248 nm KrF pulsed laser. To investigate the effect of the Eu:Y2O3 film roughness on cathodoluminescence (CL) and photoluminescence (PL) properties, the substrate surfaces with various roughnesses were used. The roughness was found to play an important role in determining CL and PL brightness of the Eu:Y2O3 films. The improvement in brightness by increasing the film roughness is due to increase in total portion of light that escapes from the surface of the phosphor film. A model has been proposed which supports strongly this explanation. Our results show that depositions with slower growth rate and lower laser energy are more important parameters than increasing the roughness to improve CL brightness of the Eu:Y2O3 thin film phosphors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 21
Copyright
Copyright © Materials Research Society 2000

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References

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