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Modeling of Atomistic Processes in Semiconductors: from Defect Signatures to a Hierarchy of Annealing Mechanisms

Published online by Cambridge University Press:  26 February 2011

Michel Bockstedte
Michel Bockstedte*
Affiliation:
bockstedte@physik.uni-erlangen.de, Universidad de Pais Vasco, Fisica de materiales, Apto 1072, San Sebastian, N/A, Spain
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Abstract

The modeling of atomistic processes in semiconductors based on the density functional theory is outlined. The role of intrinsic defects in the self and dopant diffusion, as well as in the dopant activation is investigated for the case of silicon carbide. A hierarchy of annealing mechanisms for vacancies and interstitials is proposed. The identification of the microscopic origin of experimental defect centers by calculated defect signatures establishes a link between theoretical modeling and experiments.

Keywords

defectsactivation analysisannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 978: Symposium GG – Multiscale Modeling of Materials , 2006 , 0978-GG08-01
Copyright
Copyright © Materials Research Society 2007

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