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Modeling Metal Thin Film Growth under IPVD Conditions using Molecular Dynamics Rates in a Level Set Approach

Published online by Cambridge University Press:  10 February 2011

U. Hansen ,
S. Rodgers ,
M. Nemirovskaya  and
K. F. Jensen
U. Hansen
Affiliation:
Walter Schottky Institute, Technical University of Munich, D-85748 Garching, Germany Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge 02139, USA
S. Rodgers
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge 02139, USA
M. Nemirovskaya
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge 02139, USA
K. F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge 02139, USA
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Abstract

We present a recently developed method for modeling ionized physical vapor deposition. Using molecular dynamics techniques we examine the surface adsorption, reflection and sputter reactions taking place during ionized physical vapor deposition. We predict their relative probabilities and combine the information obtained from molecular dynamics into a transport model incorporating all effects of re-emission and re-sputtering. This provides a complete growth rate model that allows the inclusion of energy and angular dependent surface reaction rates. As an example, the method is applied to growth of an aluminum film under different deposition conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 233
Copyright
Copyright © Materials Research Society 2000

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