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Modeling Dislocation Loop Nucleation and Evolution in Germanium, Arsenic and Boron Implanted Silicon

Published online by Cambridge University Press:  01 February 2011

Ibrahim Avci  and
Mark E. Law
Ibrahim Avci
Affiliation:
Swamp Center, Department of Electrical Engineering, NEB Room # 535, University of Florida, Gainesville FL 32611
Mark E. Law
Affiliation:
Swamp Center, Department of Electrical Engineering, NEB Room # 535, University of Florida, Gainesville FL 32611
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Abstract

A loop nucleation and evolution model in Si+ implanted Silicon was previously introduced [1]. In this study, the model is extended to predict end of range (EOR) and projected range defect nucleation and evolution created by different ion implant species such as Germanium, Arsenic and Boron. The model assumes that all the nucleated loops come from {311} unfaulting and the loop density and average loop radius follow a log normal distribution. The model is verified with the experimental data obtained from literature for Germanium [2], Arsenic [3] and Boron [4] implanted Silicon for different implant doses and energies. Modeling results are in agreement with the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C5.9
Copyright
Copyright © Materials Research Society 2002

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References

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