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Modeling Boron and Indium Electrical Activities in Silicon in the Presence of Nitrogen

Published online by Cambridge University Press:  21 March 2011

Vladimir Zubkov ,
Sheldon Aronowitz ,
Helmut Puchner  and
Juan P. Senosiain
Vladimir Zubkov
Affiliation:
LSI Logic Corporation, 3115 Alfred Street, Santa Clara, CA 95054, U.S.A.
Sheldon Aronowitz
Affiliation:
LSI Logic Corporation, 3115 Alfred Street, Santa Clara, CA 95054, U.S.A.
Helmut Puchner
Affiliation:
LSI Logic Corporation, 3115 Alfred Street, Santa Clara, CA 95054, U.S.A.
Juan P. Senosiain
Affiliation:
Department of Materials Science and Engineering, Stanford Unversity Stanford, CA 94305, U.S.A.
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Abstract

The ab initio pseudopotential code (VASP) was employed to explore indium and boron electrical activities in silicon in the presence of nitrogen. Electrical activities for the combinations B+N, In+N, and In+B+N were explored. Formation energy of a negatively charged supercell, (E−)f, and a band gap, Eg, from calculations with one k point were chosen as indicators of acceptor activity. For separate dopants the calculated (E−)f and Eg values indicate that substitutional B and In are effective acceptors and N is an extremely weak donor. When nitrogen is adjacent to, or separated 3 - 5 bonds from B or In, it suppresses acceptor activity. Binding is greater for In+N than for B+N in agreement with secondary ion mass spectroscopy (SIMS) data that demonstrates a greater retention of N by In. This should lead to a greater drop in activity for In+N combination versus B+N one, in agreement with spreading resistance profiling (SRP) experiments. Loss of activity in In+B+N combination might be due to long range interactions between dopants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J6.5
Copyright
Copyright © Materials Research Society 2001

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References

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