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A Model of Chemical Mechanical Polishing

Published online by Cambridge University Press:  14 March 2011

Ed Paul
Ed Paul*
Affiliation:
Stockton College, Pomona NJ 08240 and NIST, Gaithersburg MD 20899, U.S.A
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Abstract

A generic model is presented which explains the dependence of chemical mechanical polishing rates on the concentration of reacting chemicals and abrasives in the slurry. The predictions of this model are compared to data from the literature for tungsten CMP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E1.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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