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A Model of Chemical Mechanical Planarization to Predict Impact of Pad Conditioning on Process Performance

  • G. Bahar Basim (a1) and Serkan Kincal (a2)

Abstract

This study presents an effort to couple a wafer removal rate profile model based on the locally relevant Preston equation to the change in pad thickness profile which reflects to post polish profile of the wafers after Chemical Mechanical Planarization. The result is a dynamic predictor of how the wafer removal rate profile shifts as the pad ages. These predictions can be used to fine tune the conditioner operating characteristics without having to carry out high cost and time consuming experiments. The accuracy of the predictions is demonstrated by individual confirmation experiments in addition to the evaluation of the defectivity performance with the varied pad conditioning profiles.

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A Model of Chemical Mechanical Planarization to Predict Impact of Pad Conditioning on Process Performance

  • G. Bahar Basim (a1) and Serkan Kincal (a2)

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