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A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

M. Meunier ,
J.H. Flint ,
D. Adler  and
J.S. Haggerty
M. Meunier
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J.H. Flint
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
D. Adler
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J.S. Haggerty
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We propose a model for laser-induced chemical vapor deposition in which the growth of hydrogenated amorphous silicon (a-Si:H) thin films is rate-controlled by the gas phase homogeneous thermal dissociation of SiH4 The gas temperature is determined by a steady-state balance between energy absorbed from the laser and energy lost by thermal conduction.The film properties are primarily controlled by the substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 397
Copyright
Copyright © Materials Research Society 1984

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References

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