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A Model for Ion-Assisted Molecular Beam Epitaxy and Application to Synthesis of Epitaxial SNxGE1-x Alloy Films

Published online by Cambridge University Press:  21 February 2011

Gang He ,
Harry A. Atwater  and
Thomas J. Watson
Gang He
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Thomas J. Watson
Affiliation:
Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
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Abstract

In this work, we develop a model for ion-assisted molecular beam epitaxy with application to synthesis of epitaxial SnxGe1-x/Ge/Si(001) with compositions up to x=0.34. The model describes the effect of energetic beam deposition on surface segregation during thin film growth. As the value of a Péclet number expressing the ratio of surface ion-mixing rate to growth rate exceeds unity, the segregation coefficient during ion-assisted growth exceeds the value during thermal growth. A comparison of the model with experiments for SnxGei.1-x synthesis is reported. The experimental results are consistent with the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 389
Copyright
Copyright © Materials Research Society 1996

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References

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