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Model for Heteroepitaxy on Patterned Substrates

  • Y. C. Kao (a1) and K. L. Wang (a1)


In this work, a new model based on energy balance for heteroepitaxial growth on a patterned substrate and an additional thin buffer layer on top of it has been developed. The structure used in our model is assumed to be GeSi/buffer-Si/patterned-Si and comparisons are made with simple crystalline GeSi/Si. However, the model described here is quite general and can be adopted for any other material systems. Using this model, coupled with experimentally known material constants, the critical layer thickness (hc ) of a lattice mismatched heterolayer can be determined for a patterned substrate, having a characteristic “seed pads” size (l), and a buffer layer thickness (hb ). The dislocation-free condition under this case is also established.



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[1] Luryi, S. and Suhir, E., Appl. Phys. Lett. 49, 140 (1986).
[2] Lin, T. L., Ph.D. Thesis, University of California, Los Angeles, 1987.
[3] Kao, Y. C., Wang, K. L., Wu, B. J., Lin, T. L., Nieh, C. W., Jamieson, D., and Bai, G., Appl. Phys. Lett 51, 1809 (1987).
[4] Lin, T. L., Sadwick, L., Wang, K. L., Rhee, S. S., Kao, Y. C., Hull, R., Nieh, C. W., Jamieson, D. N., and Liu, J. K., Appl. Phys. Lett 51, (1987).
[5] Merwe, J. H. Van der, J. Appl. Phys. 34, 123 (1962).
[6] People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985).
[7] People, R. and Bean, J. C., Appl. Phys. Lett. 49, 229(E) (1986).
[8] Suhir, E., J. Appl. Mech. 53, 657 (1986).


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