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Model Based Temperature Control in RTP Yielding ±0.1 °C accuracy on A 1000 °C, 2 second, 100 °C/s Spike Anneal

Published online by Cambridge University Press:  10 February 2011

Peter Vandenabeele  and
Wayne Renken
Peter Vandenabeele
Affiliation:
SensArray, Bouwelsesteenweg 203A, 2560 Nijlen, BELGIUM, P.Vandenabeele@ping.be
Wayne Renken
Affiliation:
SensArray, 3410 Garrett Drive, Santa Clara, CA 95054, Wayne_Renken@sensarray.com
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Abstract

A Model Based Control method is presented for accurate control of RTP systems. The model uses 4 states: lamp filament temperature, wafer temperature, quartz temperature and TC temperature. A set of 4 first order, nonlinear differential equations describes the model. Feedback is achieved by updating the model, based on a comparison between actual (measured) system response and modeled system response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 109
Copyright
Copyright © Materials Research Society 1998

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References

[1] Elia, Curtis, “RTP Multivariable temperature controller development”, Proc. Amer. Control Conf. 1994, p 907.Google Scholar
[2] Peuse, Bruce, Yam, Mark, Bahl, Suneet, Elia, Curtis, “Advances in temperature measurement and control for RTP”, RTP'97, p. 358.Google Scholar
[3] Fig. 5 in [1] and fig. 6 in [2] show a 2 sec lag between setpoint and actual temperature and a smooth transition of the actual temperature. This adjustment of the control is not adequate for sharp spike anneals with a short steady state time. A different setting of control parameters may allow a faster reaction for sharp spike anneals.Google Scholar
[4] Balakrishnan, Krishna, Cooper, Thomas, “Model-Based control of a rapid Thermal Processor”, RTP' 96, p. 279.Google Scholar
[5] USHIO Technical paper 87-10-2200SA, “Halogen lamps, technical specifications”, p.3 Google Scholar