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MOCVD ZnS:Mn Films: Crystal Structure and Defect Microstructure as a Function of the Growth Parameters

Published online by Cambridge University Press:  21 March 2011

Kathleen A. Dunn ,
Katharine Dovidenko ,
Anna W. Topol ,
Gajendra S. Shekhawat ,
Robert E. Geer  and
Alain E. Kaloyeros
Kathleen A. Dunn
Affiliation:
UAlbany Institute for Materials, The University at Albany-SUNY 251 Fuller Rd., Albany, NY 12203
Katharine Dovidenko
Affiliation:
UAlbany Institute for Materials, The University at Albany-SUNY 251 Fuller Rd., Albany, NY 12203
Anna W. Topol
Affiliation:
UAlbany Institute for Materials, The University at Albany-SUNY 251 Fuller Rd., Albany, NY 12203
Gajendra S. Shekhawat
Affiliation:
UAlbany Institute for Materials, The University at Albany-SUNY 251 Fuller Rd., Albany, NY 12203
Robert E. Geer
Affiliation:
UAlbany Institute for Materials, The University at Albany-SUNY 251 Fuller Rd., Albany, NY 12203
Alain E. Kaloyeros
Affiliation:
UAlbany Institute for Materials, The University at Albany-SUNY 251 Fuller Rd., Albany, NY 12203
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Abstract

Thin film electroluminescent devices employing zinc sulfide doped with manganese are extensively used for applications in which the weight, brightness and mechanical robustness requirements preclude the use of other types of displays such as cathode ray tubes or liquid crystal displays. The physical, optical and electrical properties of phosphors such as ZnS:Mn can often depend strongly on microstructure, which in turn depends on the growth and processing of the film. For this study, ZnS:Mn layers were fabricated by metalorganic chemical vapor deposition (MOCVD) in the 250°-500°C range on an Al2TiO/ In2SnO5 /glass stack. Selected samples were then subjected to a post-deposition anneal in H2S/Ar at 700°C for up to 4 hours. The microstructure of the ZnS:Mn films was examined by Transmission Electron Microscopy (TEM). For all growth and annealing conditions, the films consisted of columnar grains whose column axis was parallel to the growth direction, and which widened laterally through the thickness of the films. For the as-deposited films, the crystal structure was found to be predominantly 2H structure, with the 8H polytype being identified in the low-temperature ZnS:Mn films. The 700°C post-deposition annealing was found to initiate a solid state transformation to the cubic (3C) ZnS crystal structure. All films contained high densities of stacking faults and microtwins, whose role in the 2H-3C transformation is discussed. Also discussed are initial Ultrasonic Force Microscopy (UFM) results which suggest a correlation between the defect microstructure and the elastic response of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 695: Symposium L – Thin Films: Stresses and Mechanical Properties IX , 2001 , L2.5.1
Copyright
Copyright © Materials Research Society 2002

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References

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