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MOCVD of GaN Using Diethylgalliumazide and Ammonia

Published online by Cambridge University Press:  25 February 2011

Kwok-L. Ho ,
Klavs F. Jensen ,
Jen-W. Hwang ,
John F. Evans  and
Wayne L. Gladfelter
Kwok-L. Ho
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
Jen-W. Hwang
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
John F. Evans
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
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Abstract

GaN thin films have been deposited on Si and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using diethylgalliumazide and ammonia. Films were grown in the temperature range of 500-750°C. Growth rates were monitored in situ using laser interferometry. The addition of ammonia enhanced the growth rate significantly. At high temperatures, gas-phase depletion of the precursor reduced the growth rate of GaN. Films grown on (0001)-oriented sapphire substrates at temperatures above 650°C were highly textured with smooth surface morphology. Optical and electrical properties of the films are discussed and compared to those of films grown using conventional Ga and N sources.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 101
Copyright
Copyright © Materials Research Society 1991

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References

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