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MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

  • Masaru Shimizu (a1) and Tadashi Shiosaki (a1)

Abstract

The advantages of MOCVD for the growth of Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3(PLZT) thin films were discussed, with emphasis on the controllability of film composition, crystalline structure and electrical properties. The possibilities of lowering the processing temperature and scaling up the process to commercial-based production were investigated. The preparation of PZT films and electrodes with a specific focus on improving the I-V and fatigue characteristics was also investigated.

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MOCVD of Ferroelectric Pb(Zr,Ti)O3 and (Pb,La)(Zr,Ti)O3 Thin Films for Memory Device Applications

  • Masaru Shimizu (a1) and Tadashi Shiosaki (a1)

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