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MOCVD Kinetics of Precursors for Ferroeletric SBT film

Published online by Cambridge University Press:  21 March 2011

A. Baeri ,
G.G. Condorelli  and
I.L. Fragalà
A. Baeri
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, - 95125 Catania, Italy
G.G. Condorelli
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, - 95125 Catania, Italy
I.L. Fragalà
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, - 95125 Catania, Italy
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Abstract

The metal organic chemical vapour deposition kinetics of Sr(hfa)2(tet) (H-hfa =1,1,1,5,5,5-hexafluoroacetylacetone and tet= tetraglyme) and Bi(C6H5)3 single precursors have been studied upon varying operational deposition parameters, namely temperature and precursor partial pressure. These precursors are of interest for the MOCVD of SBT ferroeletric thin films. Depending upon experimental conditions, deposition processes occur either in the reaction rate limited regime or in the mass transport regime. Kinetics controlled by reaction rates (T deposition< 673 K) gives insights on the process mechanisms. The activation energies of the Sr and Bi deposition processes have been determined from the Arrhenius plots.

SrBi2Ta2O9 films were grown on industrial Pt/Ti/SiO2/Si substrates and perovskite phase films were obtained after annealing in O2 environment at 1073K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC5.5.1
Copyright
Copyright © Materials Research Society 2001

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