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MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures

Published online by Cambridge University Press:  11 February 2011

Abdel-Rahman A. El-Emawy ,
Hongjun Cao ,
Noppadon Nuntawong ,
Chiyu Liu  and
Marek Osiński
Abdel-Rahman A. El-Emawy
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106–4343, U.S.A.
Hongjun Cao
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106–4343, U.S.A.
Noppadon Nuntawong
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106–4343, U.S.A.
Chiyu Liu
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106–4343, U.S.A.
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, NM 87106–4343, U.S.A.
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Abstract

Effects of MOCVD growth parameters on structural and optical properties of double-quantum-well (DQW) structures containing uncoupled GaInNAs/GaAs and InGaAs/GaAs quantum wells have been investigated. By varying growth temperature, growth rate, V/III ratio, and DMHy flow rates, we have achieved a longer-wavelength emission from a GaInNAs well than from an InGaAs well grown in the same structure. GaInNAs/GaAs multiple-quantum-well structures grown under optimum conditions emitted at 1.25 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.16
Copyright
Copyright © Materials Research Society 2003

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References

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