Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T07:35:42.691Z Has data issue: false hasContentIssue false
  • English
  • Français

Mobility characterization of p-type and n-type strained sil-x-yGexcy/Si Epilayer hall devices

Published online by Cambridge University Press:  10 February 2011

Jeff J. Petersoa ,
Charles E. Hunt ,
Stefan F. Zappe ,
Ernst Obeneier ,
Richard Westhoff  and
McDonald Robinson
Jeff J. Petersoa
Affiliation:
Department of Electrical and Computer Engineering; University of California, Davis; Davis, CA 95616
Charles E. Hunt
Affiliation:
Department of Electrical and Computer Engineering; University of California, Davis; Davis, CA 95616
Stefan F. Zappe
Affiliation:
Microsensor and Actuator Technology, Technical University of Berlin; D-13355 Berlin, Germany
Ernst Obeneier
Affiliation:
Microsensor and Actuator Technology, Technical University of Berlin; D-13355 Berlin, Germany
Richard Westhoff
Affiliation:
Lawrence Semiconductor Research Laboratory, Inc.; Tempe, AZ 85282
McDonald Robinson
Affiliation:
Lawrence Semiconductor Research Laboratory, Inc.; Tempe, AZ 85282
Get access

Abstract

Mobilities in Si1-x-yGex Cy layers were measured using mesa etched Van der Pauw structures for alloy layers with 0 < x < 0.30 and 0 < y < 0.02 and doping levels of 1015 < N < 1018 cm-3. Mobilities in Si1-x-yGex Cy layers with x = 0.27 were found to approach Si mobilities for both μn and μp.While electron mobilities in phosphorous-doped SiGeC decrease with doping concentration, hole mobilities in boron-doped SiGeC increase with doping level, indicating ionized impurity scattering is not dominant for μp over the temperature range studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 293
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schroder, D. K., Semiconductor and Device Characterization, John Wiley & Sons, Inc., New York, 1990, p. 199.Google Scholar
3. Wang, P.J., Meyerson, B.S., Fang, F.F., Nocera, J., and Parker, B., Appl. Phys. Lett. 55, pp. 2333–2335 (27 November 1989).Google Scholar
4. Schaffler, F., Tobben, D., Herzog, H-J, Abstreiter, G., and Hollander, B., Semicond. Sci. Technol. 7, pp. 260–266 (1992).Google Scholar
5. Jain, S. C., Germanium–Silicon Strained Layers and Heterostructures, Academic Press, San Diego, 1994, p. 90.Google Scholar