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Mn–In–Co, Mn–Pt and Mn–In–Pt Based Contacts to p–GaAs

Published online by Cambridge University Press:  25 February 2011

T. S. Kalkur ,
Y. C. Lu  and
M. Rowe
T. S. Kalkur
Affiliation:
Microelectronics Research Laboratories,University of Colorado at Colorado Springs, Colorado Springs, CO 80933–7150.
Y. C. Lu
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, P.O. Box 909, Piscataway, NJ 08855–0909
M. Rowe
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, P.O. Box 909, Piscataway, NJ 08855–0909
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Abstract

Mn–In–Co, Mn–In–Pt and Mn–Pt metallizations are used to form ohmic contact on Be-implanted rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations are performed in A.G. Associates Heat pulse system in nitrogen atmosphere in the temperature range of 350°C to 800°C for 5 seconds. The contacts were found to be ohmic at an annealing temperature of 450°C. The In–Mn–Co metallization showed higher minimum contact resistivity (5 × 10−4 ohm.cm2 ) than In–Mn–Pt metallization (1.5 × 10−5 ohm.cm2 ) for an annealing temperature of 700°C and time 5 seconds. The surface morphologies of In–Mn–Pt metallizations were smooth even after alloying at 700°C for 5 seconds. The Auger analysis shows outdiffusion of Ga and As into the contact metallization and negligible indiffusion of In and Mn into GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 247
Copyright
Copyright © Materials Research Society 1990

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References

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