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Mn- and Fe- doped GaN for spintronic applications

Published online by Cambridge University Press:  01 February 2011

Enno Malguth
Affiliation:
malguth@physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Sekretariat 5-1, Hardenbergstr. 36, Berlin, 10623, Germany, +49 30 314 24440
Axel Hoffmann
Affiliation:
axel0431@mailszrz.zrz.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Stefan Werner
Affiliation:
admiral50@gmx.de, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Matthew H. Kane
Affiliation:
mhkane@ou.edu, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA, 30332-0245, United States
Ian T. Ferguson
Affiliation:
ian.ferguson@ece.gatech.edu, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA, 30332-0245, United States
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Abstract

In the context of ferromagnetic spin-coupling in dilute magnetic semiconductors, we present optical investigations on Mg co-doped GaMnN and Fe doped GaN. A complex luminescence feature occurring in Mg co-doped GaMnN around 1 eV was previously attributed to the internal 4T2(F)—4T1(F) transition of Mn4+ involved in different complexes. Selective excitation studies indicate the presence of at least three different complexes. Photoluminescence excitation spectra suggest that the internal Mn3+ transition may represent an excitation mechanism. Magneto photoluminescence spectra indicate equal g values for the ground and excited state. Low temperature infrared absorption spectra of Fe doped GaN allow to unambiguously establish the electronic structure of the Fe2+ center in GaN. Our results suggest that the Fe2+(5T2) state is stabilized against Jahn-Teller coupling by the reduced site-symmetry of the hexagonal lattice.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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