Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-29T20:40:37.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Mn- and Fe- doped GaN for spintronic applications

Published online by Cambridge University Press:  01 February 2011

Enno Malguth ,
Axel Hoffmann ,
Stefan Werner ,
Matthew H. Kane  and
Ian T. Ferguson
Enno Malguth
Affiliation:
malguth@physik.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Sekretariat 5-1, Hardenbergstr. 36, Berlin, 10623, Germany, +49 30 314 24440
Axel Hoffmann
Affiliation:
axel0431@mailszrz.zrz.tu-berlin.de, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Stefan Werner
Affiliation:
admiral50@gmx.de, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, 10623, Germany
Matthew H. Kane
Affiliation:
mhkane@ou.edu, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA, 30332-0245, United States
Ian T. Ferguson
Affiliation:
ian.ferguson@ece.gatech.edu, Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA, 30332-0245, United States
Get access

Abstract

In the context of ferromagnetic spin-coupling in dilute magnetic semiconductors, we present optical investigations on Mg co-doped GaMnN and Fe doped GaN. A complex luminescence feature occurring in Mg co-doped GaMnN around 1 eV was previously attributed to the internal 4T2(F)—4T1(F) transition of Mn4+ involved in different complexes. Selective excitation studies indicate the presence of at least three different complexes. Photoluminescence excitation spectra suggest that the internal Mn3+ transition may represent an excitation mechanism. Magneto photoluminescence spectra indicate equal g values for the ground and excited state. Low temperature infrared absorption spectra of Fe doped GaN allow to unambiguously establish the electronic structure of the Fe2+ center in GaN. Our results suggest that the Fe2+(5T2) state is stabilized against Jahn-Teller coupling by the reduced site-symmetry of the hexagonal lattice.

Keywords

III-Voptical propertiesspintronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q06-09
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ohno, H., Science 281, 951 (1998).10.1126/science.281.5379.951Google Scholar
2. Jungwirth, T., Sinova, J., Masek, J. et al. , Reviews of Modern Physics 78, 809 (2006).Google Scholar
3. Dietl, T., Ohno, H. and Matsukura, F., Phys. Rev. B 63, 195205 (2001).10.1103/PhysRevB.63.195205Google Scholar
4. Korotkov, R. Y., Gregie, J. M. et al. , Physica B: Condensed Matter 308–310, 18 (2001).Google Scholar
5. Han, B., Korotkov, R. Y., Wessels, B. W. et al. , Applied Physics Letters, 84 5320 (2004).10.1063/1.1766082Google Scholar
6. Gerstmann, U., Blumenau, A. T. and Overhof, H., Physical Review B 63, 075204 (2001).Google Scholar
7. Han, B., Wessels, B. W. and Ulmer, M. P., Applied Physics Letters 86, 042505 (2005).Google Scholar
8. Graf, T., Goennenwein, S. T. B. and Brandt, M. S., physica status solidi (b) 239, 277 (2003).Google Scholar
9. Malguth, E., Hoffmann, A., Gehlhoff, W. et al. , Physical Review B 74, 165202 (2006).Google Scholar
10. Malguth, E., Hoffmann, A., Phillips, M. and Gehlhoff, W., Mat. Res. Soc. Symposium Proceedings 892 (Eds, Kuball, M., Myers, T., Redwing, J. and Mukai, T.), 131 (2006).Google Scholar
11. Malguth, E., Hoffmann, A. and Xu, X., Physical Review 74, 165201 (2006).10.1103/PhysRevB.74.165201Google Scholar
12. Kane, M. H., Strassburg, M., Fenwick, W. E., Asghar, A., Senawiratne, J., Azamat, D., Hu, Z., Malguth, E. et al. , physica status solidi (c) 3, 2237 (2006).10.1002/pssc.200565434Google Scholar
13. Marcet, S., Ferrand, D., Halley, D. et al. , Physical Review B 74, 125201 (2006).10.1103/PhysRevB.74.125201Google Scholar
14. Gelhausen, O., Malguth, E., Phillips, M. R. et al. , Applied Physics Letters 84, 4514 (2004).Google Scholar
15. Goñi, A. R., Siegle, H., Syassen, K. et al. , Physical Review B 64, 035205 (2001).Google Scholar
16. Graf, T., Gjukic, M., Brandt, M. S. et al. , Applied Physics Letters 81, 5159 (2002).Google Scholar
17. Villeret, M., Rodriguez, S. and Kartheuser, E., Journal of Applied Physics 67, 4221 (1990).10.1063/1.344933Google Scholar
18. Mualin, O., Vogel, E. E., Orúe, M. A. de et al. , Physical Review B 65, 035211 (2001).Google Scholar
19. Ham, F. S. and Slack, G. A., Physical Review B 4, 777 (1971).Google Scholar