Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-24T00:46:34.210Z Has data issue: false hasContentIssue false
  • English
  • Français

A Misfit Dislocation Blocking Mechanism in Continuous InGaAs Layers Grown on Patterned GaAs

Published online by Cambridge University Press:  15 February 2011

G. Patrick Watson ,
Dieter G. Ast ,
Timothy J. Anderson  and
Balu Pathangey
G. Patrick Watson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Dieter G. Ast
Affiliation:
Cornell University, Department of Materials Science and Engineering, Ithaca, NY 14853
Timothy J. Anderson
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
Balu Pathangey
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
Get access

Abstract

Previous work showed that misfit dislocations were blocked at trench walls in a unique way in InGaAs strained layers grown on GaAs that was patterned and etched to form a series of mesas separated by trenches. A model is developed to explain the behavior of misfit dislocations in this material. The energy cost of extending the threading dislocation segment, which accompanies a misfit dislocation during glide, can impede the motion of these defects if the trench walls are steep enough.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 401
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Fitzgerald, E. A., Watson, G. P., Proano, R. E., Ast, D. G., Kirchner, P. D., Pettit, G. D., Woodall, J. M., J. Appl. Phys., 65, 2220, (1989).CrossRefGoogle Scholar
2 Watson, G. P., Ast, D. G., Anderson, T. J., Hayakawa, Y., in Electronic, Optical and Device Properties of Layered Structures, (1990), Material Research Society, Extended Abstract (EA-21).Google Scholar
3 Watson, G. P., Ast, D. G., Anderson, T. J., Hayakawa, Y., Appl. Phys. Lett., 58, 2517 (1991).CrossRefGoogle Scholar
4 Watson, G. P., Ast, D. G., Anderson, T. J., Pathangey, B., unpublished.Google Scholar