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A Misfit Dislocation Blocking Mechanism in Continuous InGaAs Layers Grown on Patterned GaAs

  • G. Patrick Watson (a1), Dieter G. Ast (a2), Timothy J. Anderson (a3) and Balu Pathangey (a3)

Abstract

Previous work showed that misfit dislocations were blocked at trench walls in a unique way in InGaAs strained layers grown on GaAs that was patterned and etched to form a series of mesas separated by trenches. A model is developed to explain the behavior of misfit dislocations in this material. The energy cost of extending the threading dislocation segment, which accompanies a misfit dislocation during glide, can impede the motion of these defects if the trench walls are steep enough.

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1 Fitzgerald, E. A., Watson, G. P., Proano, R. E., Ast, D. G., Kirchner, P. D., Pettit, G. D., Woodall, J. M., J. Appl. Phys., 65, 2220, (1989).
2 Watson, G. P., Ast, D. G., Anderson, T. J., Hayakawa, Y., in Electronic, Optical and Device Properties of Layered Structures, (1990), Material Research Society, Extended Abstract (EA-21).
3 Watson, G. P., Ast, D. G., Anderson, T. J., Hayakawa, Y., Appl. Phys. Lett., 58, 2517 (1991).
4 Watson, G. P., Ast, D. G., Anderson, T. J., Pathangey, B., unpublished.

A Misfit Dislocation Blocking Mechanism in Continuous InGaAs Layers Grown on Patterned GaAs

  • G. Patrick Watson (a1), Dieter G. Ast (a2), Timothy J. Anderson (a3) and Balu Pathangey (a3)

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