Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-23T15:03:02.682Z Has data issue: false hasContentIssue false
  • English
  • Français

Misfit Accommodation Mechanisms at Moving Reaction Fronts During the Initial Growth Stage of La2Zr2O7-based Pyrochlore on (001)YSZ

Published online by Cambridge University Press:  21 March 2011

C.J. Lu ,
S. Senz  and
D. Hesse
C.J. Lu
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, GERMANY
S. Senz
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, GERMANY
D. Hesse
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, GERMANY
Get access

Abstract

La2Zr2O7-based pyrochlore (LZO) islands were grown on (001)-oriented Y2O3-stabilized ZrO2 (YSZ) single crystal surfaces by the reaction between the crystals and a La2O3 vapour. The islands are epitaxial with a small tilt. On a flat substrate surface each pyramidal island consists of four domains which are slightly tilted around different <110> axes with respect to the YSZ lattice. On a YSZ surface with pits of high density, more interestingly, each larger island formed at a pit has a central hole and contains two to four <100>-tilted stripe domains in addition to the four regular <110>-tilted domains. A square network of interfacial edge dislocations having Bur- gers vectors as/2 [101] (as being the lattice parameter of YSZ) was observed in the regular domains at the LZO/YSZ reaction front of positive lattice mismatch (+5%). In stripe domains two sets of orthogonal misfit dislocations are present with different Burgers vectors of type b = as/2 [101] andas/2 [010]. The perpendicular components of the Burgers vectors give rise to the observed tilts of the LZO lattices. Possible models are proposed to explain the generation of dislocation half-loops, the preferred nucleation of the islands near YSZ surface pits as well as their growth kinetics and the formation of stripe domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 654: Symposia AA – Structure-Property Relationships of Oxide Surfaces & Interfaces , 2000 , AA3.20.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hesse, D., Sieber, H., Werner, P., Hillebrand, R. and Heydenreich, J., Z. Phys. Chem. 187, 161 (1994).Google Scholar
2. Hesse, D., Scholz, R., Senz, S., Sieber, H., Werner, P. and Heydenreich, J., in Structure and Properties of Interfaces in Ceramics, edited by Bonnell, D., Rühle, M., and Chowdhry, U., (Mater. Res. Soc. Symp. Proc. 357, Pittsburgh, PA, 1995) pp. 325–30.Google Scholar
3. Sieber, H., Hesse, D., Senz, S., Pan, X. and Heydenreich, J., Z. Anorg. Allg. Chem. 622, 1658 (1996).Google Scholar
4. Hesse, D., Solid State Ionics, 95, 1(1997).Google Scholar
5. Sieber, H., Hesse, D. and Werner, P., Philos. Mag. A 75, 889 (1997).Google Scholar
6. Sieber, H., Werner, P. and Hesse, D., Philos. Mag. A 75, 909 (1997).Google Scholar
7. Graff, A., Senz, S., Zakharov, N.D. and Hesse, D., Z. Phys. Chem. 206, 117(1998).Google Scholar
8. Mitterdorfer, A. and Gauckler, L.J., Solid State Ionics 111, 185 (1998).Google Scholar
9. Lu, C.J., Senz, S. and Hesse, D., Philos. Mag. Lett., submitted.Google Scholar
10. Lu, C.J., Senz, S. and Hesse, D., Philos. Mag. A, submitted.Google Scholar
11. Christiansen, S., Albrecht, M., Strunk, H.P., Hansson, P.O. and Bauser, E., Appl. Phys. Lett. 66, 574 (1995).Google Scholar
12. Albrecht, M., Christiansen, S., Hansson, P.O., Strunk, H.P., and Bauser, E.: in Polycrystalline Semiconductors III, edited by Strunk, H.P., Werner, J.H., Fortin, B., and Bonnaud, O. (Scitec Publications Ltd, Switzerland, 1994) p.41.Google Scholar