Hostname: page-component-5c6d5d7d68-qks25 Total loading time: 0 Render date: 2024-08-07T07:03:27.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Miniaturization of Electromagnetic Bandgap Structures with Thin Film Dielectrics for Si Interposer Applications

Published online by Cambridge University Press:  15 March 2011

Koichi Takemura ,
Noriaki Ando ,
Hiroshi Toyao ,
Takashi Manako  and
Tsuneo Tsukagoshi
Koichi Takemura
Affiliation:
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Noriaki Ando
Affiliation:
System Jisso Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Hiroshi Toyao
Affiliation:
System Jisso Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Takashi Manako
Affiliation:
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Tsuneo Tsukagoshi
Affiliation:
System Jisso Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan
Get access

Abstract

We have developed miniaturized electromagnetic bandgap (EBG) structures on Si having a stopband that covers the 2.4 GHz band. By combining thin film dielectrics with inductance-enhanced EBG structures, the unit cell size can be reduced to 1 mm × 1 mm or less. Like the EBG structures embedded in conventional printed circuit boards, the stopbands can be designed using the transmission-line theory. The developed EBG structures can be integrated into Si interposers to suppress power noise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1223 , 2009 , 1223-EE03-07
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Abhari, R. and Eleftheriades, G. V., IEEE Trans. Microw. Theory Tech. 51, 1629 (2003).Google Scholar
2. Rogers, S. D., IEEE Trans. Microw. Theory Tech. 53, 2495 (2005).Google Scholar
3. Ando, N., Toyao, H., Tsukagoshi, T., and Harada, T., Proc. of Metamaterials 2008, Pamplona, Spain, pp. 549–551. Sep. 2008.Google Scholar
4. Takemura, K., Ohuchi, A., and Shibuya, A., Proc. IEEE 9th VLSI Packaging Workshop, Kyoto, Japan, pp. 127–130, Dec. 2008.Google Scholar