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Millisecond Duration Annealing of Boron Implants in Silicon

Published online by Cambridge University Press:  26 February 2011

D. A. Smith ,
R. A. McMahon ,
H. Ahmed  and
D. J. Godfrey
D. A. Smith
Affiliation:
Microelectronics Research Laboratory, Department of Physics, University of Cambridge CB4 4FW, U.K.
R. A. McMahon
Affiliation:
Microelectronics Research Laboratory, Department of Physics, University of Cambridge CB4 4FW, U.K.
H. Ahmed
Affiliation:
Microelectronics Research Laboratory, Department of Physics, University of Cambridge CB4 4FW, U.K.
D. J. Godfrey
Affiliation:
G.E.C. Research Limited, Hirst Research Centre, East Lane, Wembley, Middlesex, HA9 7PP, sU.K.
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Abstract

A dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 725
Copyright
Copyright © Materials Research Society 1988

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References

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