Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-25T17:17:33.164Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure of Si Films Deposited on Si(100) Surfaces by Remote Plasma-Enhanced Chemicalvapor Deposition, Rpecvd: Dependence on Process Pressure and Substrate Temperature

Published online by Cambridge University Press:  21 February 2011

S. Habermehl ,
S. S. He ,
Y. L. Chen  and
G. Lucovsky
S. Habermehl
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
S. S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
Y. L. Chen
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

The microstructure of Si thin films, deposited on in-situ cleaned Si(100) surfaces by remote plasma-enhanced chemical-vapor deposition (RPECVD), is dependent on the process pressure, substrate temperature and H2 flow rate. Surface characterization by on-line low energy electron diffraction, LEED, has been used to detect changes in the character of the deposited films which can either be amorphous, microcrystalline or crystalline, hereafter designated as a-Si, Sμc-Si, and c-Si, respectively. We have used these results to generate phase diagrams for the Si microstructure as a function of the process pressure and substrate temperature, including the flow rate of H2 as an additional deposition parameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 379
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Lucovsky, G. and Tsu, D. in Thin Film Processes II, edited by Vossen, J. and Kern, W., (NY: Academic Press, 1991) p.565.CrossRefGoogle Scholar
[2] Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60 (4), 434 (1992).Google Scholar
[3] Irby, J., Kinosky, D., HSU, T., Qian, R., Mahajan, A., Thomas, S., Anthony, B., Tasch, A. and Magee, C., Journal of Electronic Materials, 21 (5), 543 (1992).Google Scholar
[4] Fitch, J.T., Sumakeris, J.J., and Lucovsky, G., SPIE 1188, 39 (1990).Google Scholar
[5] Hatangady, S. V., Posthill, J. B., Fountain, G.G., Rudder, R. A., Mantini, M.J. and Markunas, R.J., Appl. Phys. Lett. 59 (3), 339 (1991).Google Scholar
[6] Schneider, T. P., Bernhard, B. L., Chen, Y. L. and Nemanich, R. J. in Chemical Surface Preparation. Passivation and Cleaning for Semiconductor Growth and Processing. edited by Nemanich, R.J., Helms, C.R., Hirose, M. and Rubloff, G.W. (MRS Proc. 259, San Fransisco, CA, 1992).Google Scholar
[7] Lucovsky, G., Nemanich, R.J., and Knights, J. C., Phys. Rev. B 19 (4), 2064 (1979).Google Scholar
[8] Fountain, G. G., Alley, R. G., Malta, D. P., Posthill, J. B., Markunas, R. J., Ikeda, T., Chen, Y. L. and Maher, D., presented at 39th AVS National Symp., Nov., 1992, Chicago, III. (in press, JVST A, 1993).Google Scholar
[9] Rudder, R. A., Hattangady, S. V., Vitkavage, D. J., and Markunas, R.J., MRS Symp. Proc. 116, p.519 (1988).CrossRefGoogle Scholar
[10] Jaewon Cho, Schneider, T.P., VanderWeide, J., Jeon, Hyeongtag, and Nemanich, R.J., Appl. Phys. Lett., 59 (16), 1995 (1991).Google Scholar