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Microstructure and Thermoelectric Properties of p-Type Bi0.5Sb1.5Te3 and n-Type Bi2Te2.7Se0.3 Films Deposited by Pulsed Laser Ablation

Published online by Cambridge University Press:  21 March 2011

Raghuveer S. Makala ,
K. Jagannadham ,
B.C. Sales  and
Hsin Wang
Raghuveer S. Makala
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC-27695-7907
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC-27695-7907
B.C. Sales
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
Hsin Wang
Affiliation:
High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Thin films of p-type Bi0.5Sb1.5Te3, n-type Bi2Te2.7Se0.3 and n-type with SbI3 doping were deposited on mica substrates using Nd-YAG pulsed laser ablation at temperatures ranging from 300°C to 500°C. These films were characterized using X-ray diffraction, SEM and TEM. X-ray mapping and EDS were used to determine the composition. The films showed uniform thickness and high crystalline quality with a preferred (00n) alignment with the substrates. The film quality in terms of composition and crystal perfection is studied as a function of growth temperature. It was found that films deposited at 350°C gave improved crystallinity and thermoelectric characteristics. The Seebeck coefficient, electrical resistivity and Hall mobility were measured as a function of temperature and compared with the measurements on the bulk. Correlation of thermoelectric properties with microstructure is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G8.4
Copyright
Copyright © Materials Research Society 2002

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References

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