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Microstructure and Electrical Properties of Zinc Films on InP

Published online by Cambridge University Press:  15 February 2011

E. Kamiinska ,
A. Piotrowska ,
A. Barcz ,
S. Kasjaniuk ,
E. Mizera  and
E. Dynowska
E. Kamiinska
Affiliation:
Institute of Electron Technology, Warszawa, Poland, eliana@ite.waw.pl
A. Piotrowska
Affiliation:
Institute of Electron Technology, Warszawa, Poland, eliana@ite.waw.pl
A. Barcz
Affiliation:
Institute of Electron Technology, Warszawa, Poland, eliana@ite.waw.pl
S. Kasjaniuk
Affiliation:
Institute of Electron Technology, Warszawa, Poland, eliana@ite.waw.pl
E. Mizera
Affiliation:
Institute of Physics, PAS Warszawa, Poland
E. Dynowska
Affiliation:
Institute of Physics, PAS Warszawa, Poland
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Abstract

The interactions between thin films of Zn and (100)InP were analysed with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition, and to form an ohmic contact when deposited on n-type InP. Under heat treatment Zn protrudes into InP, and beneath Zn/InP interface a tetragonal Zn3P2 phase lattice matched to InP grows.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 465
Copyright
Copyright © Materials Research Society 1996

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