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Microstructure and Composition of Surface Layers Formed by Ion Implantation of Nitrogen in High-Purity Aluminum

Published online by Cambridge University Press:  26 February 2011

Robert C. Mccune
Affiliation:
Research Staff, Ford Motor Company, P.O. Box 2053, Dearborn, MI 48121, USA
W. T. Donlon
Affiliation:
Research Staff, Ford Motor Company, P.O. Box 2053, Dearborn, MI 48121, USA
H. K. Plummer Jr.
Affiliation:
Research Staff, Ford Motor Company, P.O. Box 2053, Dearborn, MI 48121, USA
L. Toth
Affiliation:
Research Staff, Ford Motor Company, P.O. Box 2053, Dearborn, MI 48121, USA
F. W. Kunz
Affiliation:
Research Staff, Ford Motor Company, P.O. Box 2053, Dearborn, MI 48121, USA
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Abstract

Surface layers with overall thickness <∼300 nm were produced by ion implantation of N+ or N2+ at energies of 50 or 100 keV in 99.99% pure aluminum. These surfaces were characterized by scanning and transmission electron microscopy, Auger electron spectroscopy, Rutherford backscattering, nuclear reaction analysis and particle-induced X-ray analysis. At doses above 2×1017 N2/cm2 , blistering of the surfaces was observed along with a reduction in the extent of the coulometric dose retained by the material. Oxygen is believed to be introduced into the near-surface region by a process of reaction and ion-beam mixing, as well as possible CO contamination of the beam. A phase, isostructural with AlN, forms semi-coherently with parent aluminum grains, however, some fraction of the metallic aluminum phase remains in the reaction layer, even at overall nitrogen contents which exceed the stoichiometry of AlN.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Ohira, S. and Iwaki, M., Mat. Sci. Engr. 90, 143 (1987).CrossRefGoogle Scholar
2. Singh, A., Lessard, R.A. and Knystautas, E.J., Thin Solid Films 138, 79 (1986).CrossRefGoogle Scholar
3. Kimura, K., Onitsuka, Y., Nakanishi, K. and Mannami, M., Jpn. J. Appl. Phys. 23 (8), 1145 (1984).CrossRefGoogle Scholar
4. Rauschenbach, B., Kolitsch, A. and Richter, E., Thin Solid Films 109, 37 (1983).CrossRefGoogle Scholar
5. Kido, Y., Kakeno, M., Yamada, K., Hioki, T., Kawamoto, J. and Tada, M., J. Phys. D: Appl. Phys. 15, 2067 (1982).CrossRefGoogle Scholar
6. Lieske, N. and Hezel, R., J. Appl. Phys. 52 (9), 5806 (1981).CrossRefGoogle Scholar
7. Belii, I.M., Komarov, F.F., Tishkov, V.S. and Yankorskii, V.M., Phys. Stat. Sol. (a) 45, 343 (1978).CrossRefGoogle Scholar
8. Pavlov, P.V., Zorin, E.I., Tetelbaum, D.I., Lesnikov, V.P., Ryzhkov, G.M. and Pavlov, A.V., Phys. Stat. Sol. (a) 19, 373 (1973).CrossRefGoogle Scholar
9. McCune, R.C., Donlon, W.T., Plummer, H.K. Jr, Toth, L. and Kunz, F.W., Ford Motor Co. Tech. Report. SR-87–98 (1987).Google Scholar
10. McCune, R.C. and Plummer, H.K., Surf. and Interface Anal. 4, 257 (1982).CrossRefGoogle Scholar
11. Liau, Z.L. and Mayer, J.W., J. Vac. Sci. Technol. 15 (5), 1629 (1978).CrossRefGoogle Scholar
12. Hadley, L.N. and Dennison, D.M., J. Opt. Soc. Am. 37 (6), 451 (1947).CrossRefGoogle Scholar