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Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

  • S. Jin (a1), H. Bender (a1), R.A. Donaton (a1), K. Maex (a1), A. Vantomme (a2), G. Langouche (a2), A.St. Amour (a3) and J.C. Sturm (a3)...

Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

  • S. Jin (a1), H. Bender (a1), R.A. Donaton (a1), K. Maex (a1), A. Vantomme (a2), G. Langouche (a2), A.St. Amour (a3) and J.C. Sturm (a3)...

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