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Microstructural Investigation of the TiSi2/Si (111) Interface

Published online by Cambridge University Press:  21 February 2011

A. Catana ,
M. Heintze ,
P.E. Schmid ,
P. Stadelmann  and
F. Levy
A. Catana
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
M. Heintze
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
P.E. Schmid
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
P. Stadelmann
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
F. Levy
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
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Abstract

HREM was used to investigate the microstructure and bonding configuration at the interface between TiSi2 and Si (111). The interpretation of the micrographs requires extensive image calculations which were carried out for the first time on this very complex silicide/silicon system. Four different interface models are presented and the corresponding computed interface images are compared with the experimental image. Contrast analysis shows that a model in which a final plane of Ti abuts a layer of Si with a configuration typical of bulk Si best matches the observations. Moreover, the presence of Ti at the interface seems to stabilize a terminal plane of Si with triple dangling bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 369
Copyright
Copyright © Materials Research Society 1989

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References

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