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Microstructural Correlation with Electrical Properties for Y2O3 Doped CeO2 Thin Films

  • Chunyan Tian (a1) and Siu-Wai Chan (a1)


High quality textured 0.58% Y2O3 doped CeO2 films with (001), (111)/(001) and (110) were prepared using an e-beam deposition technique on substrates of (001) LaAlO3, r-cut sapphire, and fused silica, respectively. The composition and stoichiometry of the films were verified by Rutherford backscattering spectroscopy analysis. Both x-ray diffraction and transmission electron microscopy analyses gave consistent microstructural information. Complex impedance measurements have been performed to study the electrical properties of these films as a function of temperature. The conductivities of the films were dominated by grain boundaries of high conductivities as compared to that of the bulk ceramic of the same dopant concentration. The activation energies for the film conductivities were only slightly higher than that for the bulk lattice conductivities, but much lower than that for the bulk grain boundary conductivity. These results have been discussed in terms of the differences of the grain size and grain boundary microstructures between the films and the bulk ceramics.



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