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Microstructural Characterization of Pt/Ti and RuO2 Electrodes on SiO2/Si Annealed in the Oxygen Ambient

Published online by Cambridge University Press:  10 February 2011

Jeong Soo Lee ,
Hyun JA Kwon ,
Young Woo Jeong ,
Hyun HA Kim ,
Kyu HO Park  and
Cha Yeon Kim
Jeong Soo Lee
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Hyun JA Kwon
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Young Woo Jeong
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Hyun HA Kim
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Kyu HO Park
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
Cha Yeon Kim
Affiliation:
LG Electronics Research Center, 16, Woomyeon-dong, Seocho-gu, Seoul 137–140, Korea
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Abstract

Microstructures and interdiffusions of Pt/Ti/SiO2/Si and RuO2/SiO2/Si during annealing in O2 were investigated using x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The degree of oxidation and the interdiffusion of elements have remarkably increased with increasing temperature above 500 °C for the Pt/Ti/SiO2/Si case. The generation of Pt hillocks commenced at 500 °C. The Pt-silicide phase was also observed near the TiOx/SiO2 interface. The microstructural variations occurred to only a small amount for the RuO2/SiO2/Si case over the temperature range 300 – 700 °C. While there was no hillock formation, the RuO2 film surface was roughened by the thermal grooving phenomenon. A thin interlayer phase was found at the RuO2/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 175
Copyright
Copyright © Materials Research Society 1996

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