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Microstructural Characterization of Pt/Ti and RuO2 Electrodes on SiO2/Si Annealed in the Oxygen Ambient

  • Jeong Soo Lee (a1), Hyun JA Kwon (a1), Young Woo Jeong (a1), Hyun HA Kim (a1), Kyu HO Park (a1) and Cha Yeon Kim (a1)...

Abstract

Microstructures and interdiffusions of Pt/Ti/SiO2/Si and RuO2/SiO2/Si during annealing in O2 were investigated using x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The degree of oxidation and the interdiffusion of elements have remarkably increased with increasing temperature above 500 °C for the Pt/Ti/SiO2/Si case. The generation of Pt hillocks commenced at 500 °C. The Pt-silicide phase was also observed near the TiOx/SiO2 interface. The microstructural variations occurred to only a small amount for the RuO2/SiO2/Si case over the temperature range 300 – 700 °C. While there was no hillock formation, the RuO2 film surface was roughened by the thermal grooving phenomenon. A thin interlayer phase was found at the RuO2/SiO2 interface.

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Microstructural Characterization of Pt/Ti and RuO2 Electrodes on SiO2/Si Annealed in the Oxygen Ambient

  • Jeong Soo Lee (a1), Hyun JA Kwon (a1), Young Woo Jeong (a1), Hyun HA Kim (a1), Kyu HO Park (a1) and Cha Yeon Kim (a1)...

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