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Microstructural and Magnetic Characterization of Ni Films with In-Plane Anisotropy Induced by Ion Bombardment During Growth

  • W. A. Lewis (a1), H. Saffari (a1), M. Farle (a1), E. Kay (a1) and S. B. Hagstrom (a1)...

Abstract

Ni films 250 to 1500 Å thick are prepared on polished amorphous quartz substrates in ultrahigh vacuum by ion beam sputter deposition. The growing film is bombarded simultaneously with Xe+ ions at an oblique angle of incidence. The structural and magnetic modifications are studied for different film thicknesses as a function of Xe+ ion energies (50–200 eV) and relative flux of arriving Ni atoms/Xe ions at the substrate. Lattice spacings and degree of texturing are determined by x-ray diffraction. Magnetic in-plane anisotropy is determined by longitudinal magneto-optic Kerr effect measurements. Our results show that an uniaxial in-plane magnetic anisotropy is induced with the hard magnetization direction parallel to the plane of incidence of the secondary Xe+ ions, and a (111) texture with an increased plane spacing of 0.5% is measured. The microstructure of the film and the magnitude of the anisotropy is sensitive to film thickness and flux ratio. For films prepared without secondary ion bombardment, the plane spacings correspond to those for bulk Ni, and isotropic magnetic behavior is observed.

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Microstructural and Magnetic Characterization of Ni Films with In-Plane Anisotropy Induced by Ion Bombardment During Growth

  • W. A. Lewis (a1), H. Saffari (a1), M. Farle (a1), E. Kay (a1) and S. B. Hagstrom (a1)...

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