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A microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs

Published online by Cambridge University Press:  15 February 2011

J. S. Kwak ,
H. K. Baik ,
H. Kim ,
J. -L. Lee ,
D. W. Shin  and
C. G. Park
J. S. Kwak
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
H. K. Baik
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
H. Kim
Affiliation:
Semiconductor Technology Division, ETRI, Deajon 305-606, Korea
J. -L. Lee
Affiliation:
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
D. W. Shin
Affiliation:
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
C. G. Park
Affiliation:
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
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Abstract

Interfacial microstructure and elemental diffusion of Pd/Ge/Ti/Au ohmic contact to n-type GaAs have been investigated using x-ray diffraction(XRD), Auger electron spectroscopy(AES), and cross-sectional transmission electron microscopy(XTEM), and their results are used to interpret the electrical properties. The lowest contact resistance of 0.43 Ωmm is obtained after annealing at 380°C. The contact is thermally stable even after isothermal annealing for 5h at 400°C. The good Pd/Ge/Ti/Au ohmic contact is due to the formation of both AuGa and TiO compounds. The AuGa compound enhances the creation of more Ga vacancies, followed by incorporation of Ge into Ga vacancies and TiO compound suppresses As outdiffusion from GaAs substrate, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 571
Copyright
Copyright © Materials Research Society 1996

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