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A Microstructual Analysis of Au/Pd/Ti Ohmic Contacts for GaAs-Based Heterojunction Bipolar Transistors (HJBTs)

Published online by Cambridge University Press:  26 February 2011

Bernard M. Henry ,
A. E. Staton-Bevan ,
V. K. M. Sharma ,
M. A. Crouch  and
S. S. Gill
Bernard M. Henry
Affiliation:
Department of Materials, Imperial College, London University, London, SW7 2AZ, U.K.
A. E. Staton-Bevan
Affiliation:
Department of Materials, Imperial College, London University, London, SW7 2AZ, U.K.
V. K. M. Sharma
Affiliation:
Department of Materials, Imperial College, London University, London, SW7 2AZ, U.K.
M. A. Crouch
Affiliation:
D.R.A. (Electronics Division), R.S.R.E., St. Andrews Road, Malvern, Worcs., WR14 3PS, U.K.
S. S. Gill
Affiliation:
D.R.A. (Electronics Division), R.S.R.E., St. Andrews Road, Malvern, Worcs., WR14 3PS, U.K.
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Abstract

Au/Pd/Ti and Au/Ti/Pd ohmic structures to thin p+-GaAs layers have been investigated for use as contacts to the base region of HJBTs. The Au/Pd/Ti contact system yielded specific contact resistivities at or above 2.8 × 10−5Ω:cm2. Heat treatments up to 8 minutes at 380°C caused only limited interaction between the metallization and the semiconductor. The metal penetrated to a maximum depth of ≃2nm. Specific contact resistivity values less than 10−5Ωcm2 were achieved using the Au/Ti/Pd (400/75/75nm) scheme. The nonalloyed Au/Ti/Pd contact showed the best combination of electrical and structural properties with a contact resistivity value of 9 × 10≃6Ωcm2 and Pd penetration of the GaAs epilayer to a depth of cs30nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 431
Copyright
Copyright © Materials Research Society 1992

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References

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