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Microcrystallinity in α-Si, Ge:H, F Alloys

  • D. S. Shen (a1), J. Kolodzey, D. Slobodin (a1), J. P. Conde (a1), C. Lane (a1), I. H. Campbell (a1), P. M. Fauchet (a1) and S. Wagner (a1)...

Abstract

Microcrystalline inclusions in hydrogenated and fluorinated amorphous silicongermanium alloys, α-Si, Ge:H, F, were studied. Microcrystals grown during RF or DC glow discharge deposition from SiF4, GeF4 and H2 consist of either pure Si or Ge. Microcrystals produced by thermal annealing of initially amorphous alloys are either microcrystalline Ge or microcrystalline Si-Ge alloys depending on the annealing temperature. Values for the grain size were calculated from X-ray diffraction (XRD) and Raman spectra. The grain size of the “grown” microcrystal ranges from 8 to 60 nm. These grown grains exhibit preferential orientation of the (220) planes parallel to the substrate surface. Microcrystals produced by high-temperature anneal are randomly oriented. Scanning electron micrographs of as-grown samples show protruding platelets several 100 nm long and several 10 nm wide. Fractured cross sections exhibit columnar structure.

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Microcrystallinity in α-Si, Ge:H, F Alloys

  • D. S. Shen (a1), J. Kolodzey, D. Slobodin (a1), J. P. Conde (a1), C. Lane (a1), I. H. Campbell (a1), P. M. Fauchet (a1) and S. Wagner (a1)...

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