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MeV Si Ions Bombardment Effects on the Thermoelectric Properties of Si/Si+Ge Multi-Layer Superlttice Nanolayered Films

Published online by Cambridge University Press:  01 February 2011

Marcus Pugh ,
S. Budak ,
Cydale Smith ,
John Chacha ,
Kudus Ogbara ,
Kaveh Heidary ,
R. B. Johnson ,
Clauidu Muntele  and
D. ILA
Marcus Pugh
Affiliation:
marcuspughp@yahoo.com, Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
S. Budak*
Affiliation:
satilmis.budak@aamu.edu, Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Cydale Smith
Affiliation:
cydale@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
John Chacha
Affiliation:
chacha_john79@hotmail.com, Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
Kudus Ogbara
Affiliation:
kudus.ogbara@att.net, Alabama A&M University, Physics, Normal, Alabama, United States
Kaveh Heidary
Affiliation:
kaveh.heidary@aamu.edu, Alabama A&M University, Department of Electrical Engineering, Normal, Alabama, United States
R. B. Johnson
Affiliation:
barry@w4wb.com, Alabama A&M University, Physics, Normal, Alabama, United States
Clauidu Muntele
Affiliation:
clauidu@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
D. ILA
Affiliation:
ila@aamuri.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Normal, Alabama, United States
*
*Corresponding author: S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: satilmis.budak@aamu.edu
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Abstract

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ or decreasing K. MeV ion bombardment caused defects and disorder in the film and the grain boundaries of these nano-scale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We have prepared 100 alternating layers of Si/Si+Ge nanolayered superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the nanolayered superlattice films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. We have characterized the thermoelectric thin films before and after Si ion bombardments as we measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences

Keywords

thermoelectricitynanostructureion-beam processing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD05-14
Copyright
Copyright © Materials Research Society 2010

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