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MeV Ion Implantation of Er into LiNbO3

Published online by Cambridge University Press:  25 February 2011

M. Fleuster
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum (KFA), D-W5170 Jülich, Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum (KFA), D-W5170 Jülich, Germany
H. Holzbrecher
Affiliation:
ZCH of KFA Jülich, D-W5170 Jülich, Germany
U. Breuer
Affiliation:
ZCH of KFA Jülich, D-W5170 Jülich, Germany
M. Dinand
Affiliation:
Angewandte Physik, Universität, D-W4790 Paderborn, Germany
H. Suche
Affiliation:
Angewandte Physik, Universität, D-W4790 Paderborn, Germany
R. Brinkmann
Affiliation:
Angewandte Physik, Universität, D-W4790 Paderborn, Germany
W. Sohler
Affiliation:
Angewandte Physik, Universität, D-W4790 Paderborn, Germany
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Abstract

The incorporation of Er into LiNbO3 is of great interest for fabricating waveguide lasers and amplifiers. We compare Er diffusion data with the results of Er implantation, performed at 3.6 MeV energy. Even after annealing for 4h at 1060°C, the resulting Er profiles display very good matching to the optical modes. The results of a theoretical gain estimate are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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