Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-16T23:02:43.751Z Has data issue: false hasContentIssue false
  • English
  • Français

Methods to Decrease Defect Density in GaAs/Si Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

Zuzanna Liliental-Weber
Zuzanna Liliental-Weber*
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory 62-203, 1 Cyclotron Rd, Berkeley, CA 94720
Get access

Abstract

In this paper, the fundamental mechanisms of procedures improving the structural quality of GaAs grown on Si are discussed. Patterned growth, strained layer superlattices and proper thermal cycling are promising approaches to achieve a high quality of GaAs layers grown on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 205
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.see e. g. MRS Symp. Proc. vol. 91 (1987); 94 (1987); 116 (1988), and this volumeGoogle Scholar
2. Hsieg, K. C., Feng, M. S., and Stillman, G. E., MRS Symp. Proc. vol. 116, 261 (1988).Google Scholar
3. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).CrossRefGoogle Scholar
4. Blakeslee, A. E., AI-Jassim, M. M. and Asher, S. E., MRS Symp. Proc. vol. 116, 105 (1987).CrossRefGoogle Scholar
5. Liliental-Weber, Z., Washburn, J., Newman, N., Spicer, W. E., and Weber, E. R., Appl. Phys. Lett. 49, 1514 (1986).CrossRefGoogle Scholar
6. Liliental-Weber, Z., J. Vac. Sci. Technol. B5, 1007 (1987).CrossRefGoogle Scholar
7. Wright, S. L. and Kroemer, H., AppL. Phys. Lett. 37, 210 (1980).CrossRefGoogle Scholar
8. Liliental-Weber, Z., Weber, E. R., Washburn, J., Liu, T. Y., and Kroemer, H. MRS Symp. Proc. vol. 91, 91 (1987).CrossRefGoogle Scholar
9. Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 851 (1987).CrossRefGoogle Scholar
10. Bringans, R. D., Olmstead, M. A., Ponce, F. A., Biegelsen, D. K., Krusor, B. S., and Yingling, R.D., MRS Symp. Proc.vol. 116, 51 (1988).CrossRefGoogle Scholar
11. Akiyama, M., Ueda, T., and Onozawa, S., ibid, p. 71.Google Scholar
12. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974); 32, 265 (1974).Google Scholar
13. Otsuka, N., Choi, C., Nakamura, Y., Nagakuva, S., Fischer, F., Peng, C. K., and Morkoc, H., MRS Symp. Proc. vol. 67, 85 (1986).CrossRefGoogle Scholar
14. Sakamoto, T. and Hashiguchi, G., Jap. J. Appl. Phys. 25, L57 (1986).Google Scholar
15. Liliental-Weber, Z. and O'Keeffe, M., Ultramicroscopy(1989),in press.Google Scholar
16. Noge, H., Kano, H., Hashimoto, M., and Igarashi, I., MRS Symp. Proc.vol. 116, 199 (1988).CrossRefGoogle Scholar
17. Liliental-Weber, Z. and Parechanian-Allen, L., Appl. Phys. Lett. 49, 1190 (1986).CrossRefGoogle Scholar
18. Liliental-Weber, Z., Weber, E. R., Parechanian-Allen, L. and Washburn, J. Ultramicroscopy 26, 59 (1988).CrossRefGoogle Scholar
19. Ueda, O., Soga, T., Jimbo, T., and Umeno, M., these Proceedings.Google Scholar
20. Petroff, P. M., J. Vac. Sci. Technol. B4, 874 (1987).Google Scholar
21. Gale, R. P., Tsaur, B. Y., Fan, J. C. C., Davis, F. M., and Turner, G. W., Proc. 15th PhotovoltaicSpecialists Conf 1981, p. 1051.Google Scholar
22. Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Rearah, P., Morkoc, H., Hafich, M., Wang, P. D., and Robinson, G. Y., Appl. Phys. Lett. 45, 1309, (1984).CrossRefGoogle Scholar
23. Aspen, D. E. and Ihm, J., MRS Symp. Proc.vol. 91, 45 (1987).Google Scholar
24. Nauka, K., Liliental-Weber, Z. and Reid, G.A., unpublished.Google Scholar
25. Liliental-Weber, Z., Weber, E. R., Washburn, J., Liu, T. Y., and Kroemer, H., in: “Heterostructures on Silicon: One Step Further with Silicon” Eds. Nissim, Y.I. and Rosencher, E., NATO ASI Series, vol. 160, p. 19 (1988).Google Scholar
26. Bugajski, M., Nauka, K., Rosner, S. J., and Mars, D., MRS Symp. Proc.vol. 116, 233 (1988).CrossRefGoogle Scholar
27. Bourret, E. D., Tabache, M. G., Beeman, J. W., Elliot, A. G., and Scott, M., J. Cryst. Growth 85, 275 (1987).CrossRefGoogle Scholar
28. Wessel, K. and Alexander, H., Phil.Mag. A35, 1523 (1977).CrossRefGoogle Scholar
29. Kiisters, K.H., DeCooman, B.C., and Carter, C.B., Phil. Mag. A35, 141 (1986).CrossRefGoogle Scholar
30. Pirouz, P., Ernst, F., and Cheng, T.T., MRS Symp. Proc.vol. 116, 57 (1988).CrossRefGoogle Scholar
31. Pearton, S.J., Abernathy, C.R., Caruso, R., Vernon, S.M., Short, K.T., Brown, J.M., Chu, S.N.G., Stavola, M., and Haven, V.E., J. Appl. Phys. 63, 775 (1988).CrossRefGoogle Scholar
32. George, T., Weber, E. R., Wu, A. T., Nozaki, S., Noto, N., and Umeno, M., these ProceedingsGoogle Scholar
33. Noto, N., Nozaki, S., Okada, M., Egawa, T., Soga, T., Jimbo, T., and Umeno, M., these Proceedings.Google Scholar
34. Kim, J. H., Liu, J. K., Radhakrishnan, G. Katz, J., Sakai, S., Chang, S.S., and EI-Masry, N.A., Appl. Phys. Lett. 53, 2435, (1988).CrossRefGoogle Scholar
35. Lee, H.P., Liu, X., Wang, S., George, T., and Weber, E. R., these Proceedings.Google Scholar
36. Tsai, H. L. and Lee, J. W., Appl. Phys. Lett. 51, 130 (1987).CrossRefGoogle Scholar
37. Choi, C., Otsuka, N., Munns, G., Houdre, R., Morkoc, H., Zhang, S. L., Levi, D., and Klein, M.V., Appl. Phys. Lett. 50, 992 (1987).CrossRefGoogle Scholar
38. Chand, N., Fischer, R., Sergent, A. M., Lang, D. V., Pearton, S. J. and Cho, A. Y., Appl. Phys. Lett. 51, 1013 (1987).CrossRefGoogle Scholar
39. Al-Jassim, M.M., Nishioka, T., Itoh, Y., Yamamoto, A., and Yamaguchi, M., MRS Symp. Proc.vol. 116, 141 (1988).CrossRefGoogle Scholar
40. Yamaguchi, M., Yamamoto, A., Tachikawa, M., Itoh, Y., and Sugo, M., Appl. Phys. Lett. 53, 2293 (1988).CrossRefGoogle Scholar
41. Yamaguchi, M. and Kondo, S., these Proceedings.Google Scholar
42. Matyi, R.J., Shichijo, H., Kim, T.S. and Tsai, H.L., MRS Symp. Proc.vol. 116, 105 (1988).CrossRefGoogle Scholar
43. Adkisson, J.W., Kamins, T.I., Koch, S.M., Harris, J.S. Jr, Rosner, S.J., Nauka, K. and Reid, G.A., ibid., p. 99.Google Scholar
44. Matyi, R. J., Duncan, W. M., Shichijo, H., and Tsai, H.L., Appl. Phys. Lett. 53, 2611 (1988).CrossRefGoogle Scholar
45. Lee, H.P., Huang, Y.H., Liu, X., Lin, H., Smith, J.S., Weber, E.R.. Yu, P., Wang, S. and Liliental-Weber, Z., MRS Symp. Proc.vol. 116, 219 (1988).CrossRefGoogle Scholar
46. Fitzgerald, E.A., Watson, G.P., Proano, R.E., and Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodal, J.M., J. Appl. Phys. in press.Google Scholar
47. George, T., Nozaki, S., and Weber, E. R., unpublished.Google Scholar
48. Yamaguchi, M., Nishioka, T., and Sugo, M., Appl. Phys. Lett. 54, 24 (1989).CrossRefGoogle Scholar