- Cited by 54
Seidel, Tom Zhao, Bin Sematech and Austin, T X 1996. 0.1μm Interconnect Technology Challenges and the Sia Roadmap. MRS Proceedings, Vol. 427, Issue. ,
Zhao, Bin Wang, Shi-Qing Anderson, Steven Lam, Robbie Fiebig, Marcy Vasudev, P. K. and Seidel, Thomas E. 1996. On Advanced Interconnect Using Low Dielectric Constant Materials as Inter-Level Dielectrics. MRS Proceedings, Vol. 427, Issue. ,
Zhao, B. Wang, S.-Q. Fiebig, M. Anderson, S. Vasudev, P.K. and Seidel, T.E. 1996. Reliability and electrical properties of new low dielectric constant interlevel dielectrics for high performance ULSI interconnect. p. 156.
Ganguli, Seshadri Agrawal, Hemant Wang, Bin McDonald, Jack F. Lu, Toh -M. Yang, G.-R. and Gill, William N. 1997. Improved growth and thermal stability of Parylene films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue. 6, p. 3138.
Chua Chee Tee Sarkar, G. Meng, S.C.Y. Yu, D.L.H. and Lap Chan 1997. In-plane and out-of-plane dielectric constant measurement techniques for sub-micron MOS devices. p. 86.
Sharangpani, R. and Singh, R. 1997. Chemical Vapor Deposited Teflon Amorphous Fluoropolymer as an Interlevel Dielectric Material for Low Power Integrated Circuits. MRS Proceedings, Vol. 476, Issue. ,
Yang, G.-R. Zhao, Y.-P. Neirynck, Jan M. Murarka, Shyam P. and Gutmann, Ronald J. 1997. Chemical-Mechanical Polishing of Polymer Films: Comparison of Benzocyclobutene(BCB) and Parylene-N Films by XPS and AFM. MRS Proceedings, Vol. 476, Issue. ,
Murarka, Shyam P. 1997. Multilevel interconnections for ULSI and GSI era. Materials Science and Engineering: R: Reports, Vol. 19, Issue. 3-4, p. 87.
Nalwa, Hari Singh Suzuki, Masahiro Takahashi, Akio and Kageyama, Akira 1998. Polyquinoline/bismaleimide composites as high-temperature-resistant materials. Applied Physics Letters, Vol. 72, Issue. 11, p. 1311.
Dimitrova, T and Atanassova, E 1998. Interface and oxide properties of rf sputtered Ta2O5- Si structures. Vacuum, Vol. 51, Issue. 2, p. 151.
Zhao, B. 1998. Advanced interconnect systems for ULSI technology. p. 43.
Treichel, H. Ruhl, G. Ansmann, P. Würl, R. Müller, Ch. and Dietlmeier, M. 1998. Low dielectric constant materials for interlayer dielectric. Microelectronic Engineering, Vol. 40, Issue. 1, p. 1.
Murarka, S. P. 1998. Chemical-Mechanical Planarization of the Polymer Interlayer Dielectrics. MRS Proceedings, Vol. 511, Issue. ,
Kim, Sarah E. Steinbruichel, Christoph Kumar, Atul and Bakhru, H. 1998. Characterizaton of Pecvd Fluorinated Silicon Oxides and Stabilization of Interaction with Metals. MRS Proceedings, Vol. 511, Issue. ,
Homma, Tetsuya 1998. Low dielectric constant materials and methods for interlayer dielectric films in ultralarge-scale integrated circuit multilevel interconnections. Materials Science and Engineering: R: Reports, Vol. 23, Issue. 6, p. 243.
Chang, T.C Chou, M.F Mei, Y.J Tsang, J.S Pan, F.M Wu, W.F Tsai, M.S Chang, C.Y Shih, F.Y and Huangc, H.D 1998. Enhancing the thermal stability of low dielectric constant hydrogen silsesquioxane by ion implantation. Thin Solid Films, Vol. 332, Issue. 1-2, p. 351.
Hsu, D.T. Shi, F.G. Lopatin, S. Shacham-Diamand, Y. Zhao, B. Brongo, M. and Vasudev, P.K. 1999. Electroless copper deposition solution induced chemical changes in low-k fluorinated dielectrics. Materials Science in Semiconductor Processing, Vol. 2, Issue. 1, p. 19.
Lakhtakia, Akhlesh 1999. On the Quasistatic Approximation for Helicoidal Bianisotropic Mediums. Electromagnetics, Vol. 19, Issue. 6, p. 513.
Xu, Yuhuan Tsai, Yi-pin Tu, K. N. Zhao, Bin Liu, Q.-Z. Brongo, Maureen Sheng, George T. T. and Tung, C. H. 1999. Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant. Applied Physics Letters, Vol. 75, Issue. 6, p. 853.
Maier, Gerhard Haußmann, Jörg Dietlmeier, Marcus and Banerjee, Susanta 1999. Fluorinated heteroaromatic polyethers for low dielectric constant / high temperature applications. Macromolecular Symposia, Vol. 142, Issue. 1, p. 85.
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For several years the industry has recognized the need of developing low k dielectric material and high conductivity metal for high performance interconnect. Low k dielectric will impact both power and delay favorably, while higher conductivity metal will reduce delay time. In order to be useful, new low k dielectric materials must be carefully characterized for their electrical, chemical, thermal and mechanical properties. In addition, their impact on process integration, fabrication cost and device reliability must also be considered. Since the gestation period for introducing a new material is very long, a set of standard testing methodologies are required to speed up the development process. This review will discuss various material options and the progress of material development and characterization methodologies. Example results will be provided for assessing these parameters.
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