Skip to main content Accessibility help
×
Home

Methods And Needs For Low K Material Research

  • Chiu H. Ting (a1) (a2) and Thomas E. Seidel (a1) (a3)

Abstract

For several years the industry has recognized the need of developing low k dielectric material and high conductivity metal for high performance interconnect. Low k dielectric will impact both power and delay favorably, while higher conductivity metal will reduce delay time. In order to be useful, new low k dielectric materials must be carefully characterized for their electrical, chemical, thermal and mechanical properties. In addition, their impact on process integration, fabrication cost and device reliability must also be considered. Since the gestation period for introducing a new material is very long, a set of standard testing methodologies are required to speed up the development process. This review will discuss various material options and the progress of material development and characterization methodologies. Example results will be provided for assessing these parameters.

Copyright

References

Hide All
1. Semiconductor Industry Association, The National Technology Roadmap for Semiconductors, 1994
2. Pai, P.L. and Ting, C.H., Proc. IEEE VMIC Conf., 258 (1989).
3. Ida, J. et. al., Digest of Symposium on VLSI Technology, 59 (1994).
4. Meindl, J., Georgia Institute of Technology, privite communication.
5. Zhao, B., et. al, SEMATECH internal report (1995).
6. Ting, C.H., et al., Advance Metallization for ULSI Applications, 517 (1994).
7. Ting, C.H., et al., Advanced Metallization for ULSI Applications, 49 (1994).
8. Paraszczak, J., et al., IEDM Tech, Digest, 261 (1993).
9. Cost of Ownership Model, SEMATECH report 91020473B-GEN, (1992).
10. Ting, C.H., in Handbook of Multilevel Metallization for Integrated Circuits edited by Wilson, S.R., et. al. (Noyes Publications, New Jersey, 1993)
11. Homma, T. and Murao, Y., Proc. VMIC Conf., 71 (1993).
12. Matsuda, T., et.al., Proc. of Dielectric VMIC Conf. 22 (1995).
13. Fukuda, T. et. al., Ext. Abst. of ISSDM, 158 (1993).
14. Nishimoto, Y. et.al., Proc. of Dielectric VMIC, 15 (1995).
15. Beach, W. F. and Austin, T.M., Proc. of IEPS, 190 (1988).
16. Jeng, S.P., et.al., Digest of Symposium on VLSI Technology, 73 (1994).
17. Larson, R.A., IBM J. Res. Dev., 26, 268 (1980).
18. Geffken, R.M., IEDM Tech. Digest, 542 (1983).
19. Mukai, K., et.al., IEEE J. of Solid State Circuits, SC–13, 462 (1978).
20. Nishida, T., et.al., IEEE IRPS 148 (1985).
21. Ting, C.H., et.al., Semiconductor International, p.32, Feb. (1985).
22. Eggers, H. et. al., Proc. IEEE VMIC Conf., 163 (1985).
23. Ting, C.H., et al., Advanced Metallization for ULSI Applications 351 (1994).
24. Leu, J. et.al., This conference.
25. Shacham-Diamand, Y., et al., Cornell University, privite communication.
26. Ip, F. and Ting, C.H., This Conference.
27. Interconnect reliability testchip-1 (IRTC-1), SEMATECH internal report (1995).

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed